Enhanced light-extraction in GaInN near-ultraviolet light-emitting diode with Al-based omnidirectional reflector having NiZn∕Ag microcontacts
نویسندگان
چکیده
منابع مشابه
Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes
This study examined systematically the mechanism of light interaction in the sapphire/MgF2/Al triple-layer omnidirectional reflectors (ODR) and its effects on the light output power in near ultraviolet light emitting diodes (NUV-LEDs) with the ODR. The light output power of NUV-LEDs with the triple-layer ODR structure increased with decreasing surface roughness of the sapphire backside in the O...
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Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep...
متن کاملFish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction
Non-planar GaInN/GaN light-emitting diodes were epitaxially grown to exhibit steps for enhanced light emission. By means of a large off-cut of the epitaxial growth plane from the c-plane (0.06 to 2.24 ), surface morphologies of steps and inclined terraces that resemble fish scale patterns could controllably be achieved. These patterns penetrate the active region without deteriorating the electr...
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We propose a simple method to improve the light extraction in GaN based light emitting diode. Conventional light emitting diode has an extraction limitation due to the total internal reflection which occurs at the interface between GaN and air. By using periodic grating etched at the GaN layer, we can couple more emitting light out of the active layer. Tapering the grating structure would facil...
متن کاملGaN-based Light Emitting Diode with Embedded SiO2 Pattern for Enhanced Light Extraction
The n-GaN layer of c-plane GaInN/GaN light emitting diodes (LEDs) on sapphire was modified to contain a pattern of SiO2 nanorods. This embedded pattern of 300 nm long rods and diameter of 200 400 nm was created by thermal agglomeration of a Ni mask layer and subsequent dry-etching. The light output power (LOP) and external quantum efficiency (EQE) of the resulting LEDs increased both by some 25...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2006
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2360217